LM5113 - 增强模式 GaN FET 的 5A、100V 半桥接闸极驱动器

LM5113是TI德州仪器公司的一款GaNFET驱动器产品，LM5113是增强模式 GaN FET 的 5A、100V 半桥接闸极驱动器，本站介绍了LM5113的封装应用图解、特点和优点、功能等，并给出了与LM5113相关的TI元器件型号供参考。

LM5113 - 增强模式 GaN FET 的 5A、100V 半桥接闸极驱动器 - GaNFET驱动器 - 氮化镓(GaN)?解决方案 - 德州仪器

产品描述

The LM5113 is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of driving a high-side enhancement mode GaN FET operating up to 100V. The high-side bias voltage is generated using a bootstrap technique and is internally clamped at 5.2V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the LM5113 are TTL logic compatible, and can withstand input voltages up to 14V regardless of the VDD voltage. The LM5113 has split gate outputs, providing flexibility to adjust the turn-on and turn-off strength independently.

In addition, the strong sink capability of the LM5113 maintains the gate in the low state, preventing unintended turn-on during switching. The LM5113 can operate up to several MHz. The LM5113 is available in a standard WSON-10 pin package and a 12-bump DSBGA package. The WSON-10 pin package contains an exposed pad to aid power dissipation. The DSBGA package offers a compact footprint and minimized package inductance.

产品特性

Independent High-Side and Low-Side TTL Logic Inputs
1.2A/5A Peak Source/Sink Current
High-Side Floating Bias Voltage Rail Operates up to 100VDC
Internal Bootstrap Supply Voltage Clamping
Split Outputs for Adjustable Turn-on/Turn-off Strength
0.6? /2.1? Pull-down/Pull-up Resistance
Fast Propagation Times (28ns Typical)
Excellent Propagation Delay Matching (1.5ns Typical)
Supply Rail Under-Voltage Lockout
Low Power Consumption
Packages
- WSON-10 (4 mm x 4 mm)
- DSBGA (2 mm x 2 mm)

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