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SN74AUP1G17-EP - 增强型产品低功耗单路施密特触发缓冲器
SN74AUP1G17-EP是TI德州仪器公司的一款无产品,SN74AUP1G17-EP是增强型产品低功耗单路施密特触发缓冲器,本站介绍了SN74AUP1G17-EP的封装应用图解、特点和优点、功能等,并给出了与SN74AUP1G17-EP相关的TI元器件型号供参考。
SN74AUP1G17-EP - 增强型产品低功耗单路施密特触发缓冲器 - 无 - 小尺寸逻辑器件 - 德州仪器
- Controlled Baseline
- One Assembly/Test Site, One Fabrication Site
- Enhanced Diminishing Manufacturing Sources (DMS) Support
- Enhanced Product-Change Notification
- Qualification Pedigree(1)
- Available in the Texas Instruments NanoStar and NanoFree Packages
- Low Static-Power Consumption (ICC = 0.9 µA Max)
- Low Dynamic-Power Consumption (Cpd = 4.4 pF Typ at 3.3 V)
- Low Input Capacitance (CI = 1.5 pF)
- Low Noise Overshoot and Undershoot <10% of VCC
- Ioff Supports Partial-Power-Down Mode Operation
- Includes Schmitt-Trigger Inputs
- Wide Operating VCC Range of 0.8 V to 3.6 V
- Optimized for 3.3-V Operation
- 3.6-V I/O Tolerant to Support Mixed-Mode Signal Operation
- tpd = 5.1 ns Max at 3.3 V
- Suitable for Point-to-Point Applications
- Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
- ESD Performance Tested Per JESD 22
- 2000-V Human-Body Model (A114-B, Class II)
- 200-V Machine Model (A115-A)
- 1000-V Charged-Device Model (C101)
- ESD Protection Exceeds 5000 V With Human-Body Model
(1) Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits.NanoStar, NanoFree are trademarks of Texas Instruments.
DESCRIPTION/ORDERING INFORMATION
The AUP family is TI's premier solution to the industry's low-power needs in battery-powered portable applications. This family ensures a very low static- and dynamic-power consumption across the entire VCC range of 0.8 V to 3.6 V, resulting in an increased battery life. This product also maintains excellent signal integrity.
This device functions as an independent gate with Schmitt-trigger inputs, which allows for slow input transition and better switching noise immunity at the input.
This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down.
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