SN74CB3Q3306A - 双路 FET 2.5V/3.3V 低电压高带宽总线开关

SN74CB3Q3306A是TI德州仪器公司的一款数字开关产品，SN74CB3Q3306A是双路 FET 2.5V/3.3V 低电压高带宽总线开关，本站介绍了SN74CB3Q3306A的封装应用图解、特点和优点、功能等，并给出了与SN74CB3Q3306A相关的TI元器件型号供参考。

SN74CB3Q3306A - 双路 FET 2.5V/3.3V 低电压高带宽总线开关 - 数字开关 - 信号开关 - 德州仪器

产品描述

The SN74CB3Q3306A is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3306A provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems.

The SN74CB3Q3306A is organized as two 1-bit switches with separate output-enable (1OE, 2OE) inputs. It can be used as two 1-bit bus switches or as one 2-bit bus switch. When OE is low, the associated 1-bit bus switch is ON and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is high, the associated 1-bit bus switch is OFF, and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

产品特性

High-Bandwidth Data Path (up to 500 MHz(1))
5-V-Tolerant I/Os With Device Powered Up or Powered Down
Low and Flat ON-State Resistance (ron) Characteristics Over Operating Range (ron = 4 Ω Typ)
Rail-to-Rail Switching on Data I/O Ports
- 0- to 5-V Switching With 3.3-V VCC
- 0- to 3.3-V Switching With 2.5-V VCC
- Bidirectional Data Flow With Near-Zero Propagation Delay
Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 3.5 pF Typ)
Fast Switching Frequency (f OE = 20 MHz Max)
Data and Control Inputs Provide Undershoot Clamp Diodes
Low Power Consumption (ICC = 0.25 mA Typ)
VCC Operating Range From 2.3 V to 3.6 V
Data I/Os Support 0- to 5-V Signaling Levels (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)
Control Inputs Can Be Driven by TTL or 5-V/3.3-V CMOS Outputs
Ioff Supports Partial-Power-Down Mode Operation
Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
ESD Performance Tested Per JESD 22
- 2000-V Human-Body Model (A114-B, Class II)
- 1000-V Charged-Device Model (C101)
Supports Both Digital and Analog Applications: USB Interface, Differential Signal Interface, Bus Isolation, Low-Distortion Signal Gating

(1) For additional information regarding the performance characteristics of the CB3Q family, refer to the TI application report, CBT-C, CB3T, and CB3Q Signal-Switch Families, literature number SCDA008.

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