SN74CBT3383C - 具有 -2V 下冲保护的 10 位 FET 总线交换开关

SN74CBT3383C是TI德州仪器公司的一款数字开关产品，SN74CBT3383C是具有 -2V 下冲保护的 10 位 FET 总线交换开关，本站介绍了SN74CBT3383C的封装应用图解、特点和优点、功能等，并给出了与SN74CBT3383C相关的TI元器件型号供参考。

SN74CBT3383C - 具有 -2V 下冲保护的 10 位 FET 总线交换开关 - 数字开关 - 信号开关 - 德州仪器

产品描述

The SN74CBT3383C is a high-speed TTL-compatible FET bus-exchange switch with low ON-state resistance (ron), allowing for minimal propagation delay. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBT3383C provides protection for undershoot up to –2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state.

The SN74CBT3383C is organized as a 10-bit bus switch, or as a 5-bit bus-exchange switch with a single output-enable (BE)\ input that provides data exchanging between four signal ports. The select (BX) input controls the data path of the bus-exchange switch. When BE\ is low, the A port is connected to the B port, allowing bidirectional data flow between ports. When BE\ is high, a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, BE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

产品特性

Undershoot Protection for Off-Isolation on A and B Ports Up to –2 V
Bidirectional Data Flow, With Near-Zero Propagation Delay
Low ON-State Resistance (ron) Characteristics (ron = 3 Typical)
Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 8 pF Typical)
Data and Control Inputs Provide Undershoot Clamp Diodes
Low Power Consumption (ICC = 3 µA Max)
VCC Operating Range From 4 V to 5.5 V
Data I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
Control Inputs Can be Driven by TTL or 5-V/3.3-V CMOS Outputs
Ioff Supports Partial-Power-Down Mode Operation
Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
ESD Performance Tested Per JESD 22
- 2000-V Human-Body Model (A114-B, Class II)
- 1000-V Charged-Device Model (C101)
Supports Both Digital and Analog Applications: PCI Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating

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