SN74S225 - 16 x 5 异步 FIFO 存储器

SN74S225是TI德州仪器公司的一款FIFO寄存器产品，SN74S225是16 x 5 异步 FIFO 存储器，本站介绍了SN74S225的封装应用图解、特点和优点、功能等，并给出了与SN74S225相关的TI元器件型号供参考。

SN74S225 - 16 x 5 异步 FIFO 存储器 - FIFO寄存器 - 触发器/锁存器/寄存器 - 德州仪器

产品描述

This 80-bit active-element memory is a monolithic Schottky-clamped transistor-transistor logic (STTL) array organized as 16 words by 5 bits. A memory system using the SN74S225 easily can be expanded in multiples of 48 words or of 10 bits as shown in Figure 3. The 3-state outputs controlled by a single output-enable (OE\) input make bus connection and multiplexing easy.

A first-in, first-out (FIFO) memory is a storage device that allows data to be written into and read from its array at independent data rates. This FIFO is designed to process data at rates from dc to 10MHz in a bit-parallel format, word by word.

Reading or writing is done independently, utilizing separate asynchronous data clocks. Data can be written into the array on the low-to-high transition of either load-clock (CLKA, CLKB) input. Data can be read out of the array on the low-to-high transition of the unload-clock (UNCK IN) input (normally high). Writing data into the FIFO can be accomplished in one of two ways: In applications not requiring a gated clock control, best results are achieved by applying the clock input to one of the clocks while tying the other clock input high. In applications needing a gated clock, the load clock (gate control) must be high for the FIFO to load on the next clock pulse.

CLKA and CLKB can be used interchangeably for either clock gate control or clock input.

Status of the SN74S225 is provided by three outputs. The input-ready (IR) output monitors the status of the last word location and signifies when the memory is full. This output is high whenever the memory is available to accept any data. The unload-clock (UNCK OUT) output also monitors the last word location. This output generates a low-logic-level pulse (synchronized to the internal clock pulse) when the location is vacant. The third status output, output ready (OR), is high when the first word location contains valid data and UNCK IN is high. When UNCK IN goes low, OR will go low and stay low until new valid data is in the first word position. The first word location is defined as the location from which data is provided to the outputs.

The data outputs are noninverted with respect to the data inputs and are 3-state, with a common control input (OE\). When OE\ is low, the data outputs are enabled to function as totem-pole outputs. A high logic level forces each data output to a high-impedance state while all other inputs and outputs remain active.The clear (CLR\) input invalidates all data stored in the memory array by clearing the control logic and setting OR to a low logic level on the high-to-low transition of a low-active pulse.

The SN74S225 is characterized for operation from 0°C to 70°C.

产品特性

Independent Asychronous Inputs and Outputs
16 Words by 5 Bits
DC to 10-MHz Data Rate
3-State Outputs
Packaged in Standard Plastic 300-mil DIPs

下面可能是您感兴趣的TI德州仪器公司FIFO寄存器元器件

TI公司产品现货专家，订购TI公司产品不限最低起订量，TI芯片大陆现货即时发货，香港库存3-5天发货，海外库存7-10天发货

寻找全球TI代理商现货货源 - TI公司（德州仪器）电子元件在线订购