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TPS28226 - 产品图解：
TPS28226-8 引脚高频 4A 吸入电流同步 MOSFET 驱动器
TPS28226-半桥驱动器-MOSFET和IGBT栅极驱动器-电源管理
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TI产品 - TPS28226介绍

TPS28226 - 8 引脚高频 4A 吸入电流同步 MOSFET 驱动器

TPS28226是TI德州仪器公司的一款半桥驱动器产品，TPS28226是8 引脚高频 4A 吸入电流同步 MOSFET 驱动器，本站介绍了TPS28226的封装应用图解、特点和优点、功能等，并给出了与TPS28226相关的TI元器件型号供参考。

TPS28226 - 8 引脚高频 4A 吸入电流同步 MOSFET 驱动器 - 半桥驱动器 - MOSFET和IGBT栅极驱动器 - 德州仪器

产品特性
  • Drives Two N-Channel MOSFETs with 14-ns Adaptive Dead Time
  • Wide Gate Drive Voltage: 4.5 V Up to 8.8 V With Best Efficiency at 7 V to 8 V
  • Wide Power System Train Input Voltage: 3 V Up to 27 V
  • Wide Input PWM Signals: 2.0 V up to 13.2-V Amplitude
  • Capable to Drive MOSFETs with ≥40-A Current per Phase
  • High Frequency Operation: 14-ns Propagation Delay and 10-ns Rise/Fall Time Allow FSW – 2 MHz
  • Capable to Propagate <30-ns Input PWM Pulses
  • Low-Side Driver Sink On-Resistance (0.4 Ω) Prevents dV/dT Related Shoot-Through Current
  • 3-State PWM Input for Power Stage Shutdown
  • Space Saving Enable (Input) and Power Good (Output) Signals on Same Pin
  • Thermal Shutdown
  • UVLO Protection
  • Internal Bootstrap Diode
  • Economical SOIC-8 and Thermally Enhanced 3-mm x 3-mm DFN-8 Packages
  • High Performance Replacement for Popular 3-State Input Drivers
产品应用
  • Multi-Phase DC-to-DC Converters with Analog or Digital Control
  • Desktop and Server VRMs and EVRDs
  • Portable and Notebook Regulators
  • Synchronous Rectification for Isolated Power Supplies
产品说明

The TPS28226 is a high-speed driver for N-channel complimentary driven power MOSFETs with adaptive dead-time control. This driver is optimized for use in variety of high-current one and multi-phase DC-to-DC converters. The TPS28226 is a solution that provides high efficiency, small size and low EMI emissions.

The efficiency is achieved by up to 8.8-V gate drive voltage, 14-ns adaptive dead-time control, 14-ns propagation delays and high-current 2-A source and 4-A sink drive capability. The 0.4-Ω impedance for the lower gate driver holds the gate of power MOSFET below its threshold and ensures no shoot-through current at high dV/dt phase node transitions. The bootstrap capacitor charged by an internal diode allows use of N-channel MOSFETs in a half-bridge configuration.

产品器件信息
PART NUMBERPACKAGEBODY SIZE (NOM)
TPS28226SOIC (8)4.90 mm × 3.91 mm
VSON (8)3.00 mm x 3.00 mm
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