• TI proprietary Integrated MOSFET and Packaging Technology
• Supports DDR Memory Termination with up to 6-A Continuous Output Source or Sink Current
• External Tracking
• Minimum External Components Count
• 1-V to 6-V Conversion Voltage
• D-CAP+™ Mode Architecture
• Supports All MLCC Output Capacitors and SP/POSCAP
• Selectable SKIP Mode or Forced CCM
• Optimized Efficiency at Light and Heavy Loads
• Selectable 600-kHz or 1-MHz Switching Frequency
• Selectable Overcurrent Limit (OCL)
• Overvoltage, Over-Temperature and Hiccup Undervoltage Protection
• Adjustable Output Voltage from 0.6 V to 2 V
• 3.5 mm × 4 mm, 20-Pin VQFN Package

• Memory Termination Regulator for DDR, DDR2, DDR3, DDR3L, and DDR4
• VTT Termination
• Low-Voltage Applications for 1-V to 6-V Input Rails

The TPS53317 device is a FET-integrated synchronous buck regulator designed mainly for DDR termination. It can provide a regulated output at ½ VDDQ with both sink and source capability. The TPS53317 device employs D-CAP+™ mode operation that provides ease of use, low external component count and fast transient response. The device can also be used for other point-of-load (POL) regulation applications requiring up to 6 A. In addition, the device supports full, 6-A, output sinking current capability with tight voltage regulation.

The device features two switching frequency settings (600 kHz and 1 MHz), integrated droop support, external tracking capability, pre-bias startup, output soft discharge, integrated bootstrap switch, power good function, V5IN pin UVLO protection, and supports both ceramic and SP/POSCAP capacitors. It supports input voltages up to 6.0 V, and output voltages adjustable from 0.6 V to 2.0 V.

The TPS53317 device is available in the 3.5 mm × 4 mm, 20-pin, VQFN package (Green RoHs compliant and Pb free) with TI proprietary Integrated MOSFET and packaging technology and is specified from –40°C to 85°C.