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TS3L110 - 产品图解:
TS3L110-四路 SPDT 宽频带 10/100 Base-T 局域网开关差动 8 到 4 多路复用器/多路解复用器
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TI产品 - TS3L110介绍
TS3L110 - 四路 SPDT 宽频带 10/100 Base-T 局域网开关差动 8 到 4 多路复用器/多路解复用器

TS3L110是TI公司的一款无产品,TS3L110是四路 SPDT 宽频带 10/100 Base-T 局域网开关差动 8 到 4 多路复用器/多路解复用器,本页介绍了TS3L110的产品说明、应用、特性等,并给出了与TS3L110相关的TI元器件型号供参考。

TS3L110 - 四路 SPDT 宽频带 10/100 Base-T 局域网开关差动 8 到 4 多路复用器/多路解复用器 - 无 - HDMI/LAN/VGA/DDR/视频开关 - TI公司(Texas Instruments,德州仪器)

产品描述

The TI TS3L110 LAN switch is a 4-bit 1-of-2 multiplexer/demultiplexer with a single switch-enable (E)\ input. When E\ is low, the switch is enabled, and the I port is connected to the Y port. When E\ is high, the switch is disabled, and the high-impedance state exists between the I and Y ports. The select (S) input controls the data path of the multiplexer/demultiplexer.

This device can be used to replace mechanical relays in LAN applications. This device has low and flat ron, wide bandwidth, and low crosstalk, making it suitable for 10 Base-T, 100 Base-T, and various other LAN applications. The device can be used to route signals from a 10/100 Base-T ethernet transceiver to the RJ-45 LAN connectors in laptops or in docking stations. The device is designed for low channel-to-channel skew and low crosstalk.

This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, E\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

产品特性

  • Wide Bandwidth (BW = 500 MHz Typ)
  • Low Crosstalk (XTALK = –30 dB Typ)
  • Bidirectional Data Flow, With Near-Zero Propagation Delay
  • Low and Flat ON-State Resistance (ron = 4 )
  • Switching on Data I/O Ports (0 to 5 V)
  • VCC Operating Range From 3 V to 3.6 V
  • Ioff Supports Partial-Power-Down Mode Operation
  • Data and Control Inputs Have Undershoot Clamp Diodes
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Suitable for Both 10 Base-T/100 Base-T Signaling

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