BQ2201 - SRAM 非易失性控制器 IC，用于 1 个 SRAM 内存组

BQ2201是TI德州仪器公司的一款NVSRAM（非易失性SRAM）产品，BQ2201是SRAM 非易失性控制器 IC，用于 1 个 SRAM 内存组，本站介绍了BQ2201的封装应用图解、特点和优点、功能等，并给出了与BQ2201相关的TI元器件型号供参考。

BQ2201 - SRAM 非易失性控制器 IC，用于 1 个 SRAM 内存组 - NVSRAM（非易失性SRAM） - 电源管理特殊功能 - 德州仪器

产品描述

The CMOS bq2201 SRAM Nonvolatile Controller Unit provides all necessary functions for converting a standard CMOS SRAM into nonvolatile read/write memory.

A precision comparator monitors the 5V VCC input for an out-of-tolerance condition. When out of tolerance is detected, a conditioned chip-enable output is forced inactive to write-protect any standard CMOS SRAM.

During a power failure, the external SRAM is switched from the VCC supply to one of two 3V backup supplies. On a subsequent power-up, the SRAM is write-protected until a power-valid condition exists.

The bq2201 is footprint- and timing-compatible with industry standards with the added benefit of a chip-enable propagation delay of less than 10ns.

产品特性

Power monitoring and switching for 3-volt battery-backup applications
Write-protect control
3-volt primary cell inputs
Less than 10ns chip-enable propagation delay
5% or 10% supply operation

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