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CSD83325L技术文档下载：
CSD83325L - 产品图解：
CSD83325L - CSD83325L，双路 N 通道 NexFET? 功率 MOSFET
CSD83325L是TI公司的一款N通道MOSFET晶体管产品，CSD83325L是CSD83325L，双路 N 通道 NexFET? 功率 MOSFET，本页介绍了CSD83325L的产品说明、应用、特性等，并给出了与CSD83325L相关的TI元器件型号供参考。
CSD83325L - CSD83325L，双路 N 通道 NexFET? 功率 MOSFET - N通道MOSFET晶体管 - 功率MOSFET - TI公司（Texas Instruments，德州仪器）
产品特性
- Common Drain Configuration
- Low On Resistance
- Small Footprint of 2.2 mm × 1.15 mm
- Pb-Free
- RoHS Compliant
- Halogen Free
- Gate ESD Protection
产品应用
- Battery Management
- Battery Protection
产品说明
This 12 V, 9.9 mΩ, 2.2 mm × 1.15 mm LGA Dual NexFET™ power MOSFET is designed to minimize resistance and gate charge in a small footprint. Its small footprint and common drain configuration make the device ideal for battery pack applications in small handheld devices.
Top ViewConfigurationProduct Summary
| TA = 25°C | TYPICAL VALUE | UNIT | ||
|---|---|---|---|---|
| VS1S2 | Source-to-Source Voltage | 12 | V | |
| Qg | Gate Charge Total (4.5 V) | 8.4 | nC | |
| Qgd | Gate Charge Gate-to-Drain | 1.9 | nC | |
| RS1S2(on) | Source-to-Source On-Resistance | VGS = 2.5 V | 17.5 | mΩ |
| VGS = 3.8 V | 10.9 | mΩ | ||
| VGS = 4.5 V | 9.9 | mΩ | ||
| VGS(th) | Threshold Voltage | 0.95 | V | |
Ordering Information(1)
| Device | Qty | Media | Package | Ship |
|---|---|---|---|---|
| CSD83325L | 3000 | 7-Inch Reel | 2.2 × 1.15 mm Land Grid Array (LGA) Package | Tape and Reel |
| CSD83325LT | 250 | 7-Inch Reel |
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