LM74670-Q1是TI公司的一款无产品，LM74670-Q1是具有 70uA 栅极驱动电流的零 Iq 反极性保护智能二极管控制器，本页介绍了LM74670-Q1的产品说明、应用、特性等，并给出了与LM74670-Q1相关的TI元器件型号供参考。
LM74670-Q1 - 具有 70uA 栅极驱动电流的零 Iq 反极性保护智能二极管控制器 - 无 - ORing和智能二极管 - TI公司（Texas Instruments，德州仪器）
- AEC-Q100 Qualified With the Following Results:
- Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range
- Exceeds HBM ESD Classification Level 2
- Device CDM ESD Classification Level C4B
- Peak Input AC Voltage: 42 V
- Zero IQ
- Charge Pump Gate Driver for external N-Channel MOSFET
- Low Forward-Voltage Drop and Less Power Dissipation Compared to Schottky Diode
- Capable of handling AC signal up to 300-Hz Frequency
- AC Rectifier
- Alternator
- Power Tools
- Reverse Polarity Protection
The LM74670-Q1 is a controller device that can be used with an N-Channel MOSFET in full or half bridge rectifier architectures for alternators. It is designed to drive an external MOSFET to emulate an ideal diode. A unique advantage of this scheme is that it is not ground referenced, thus it has zero IQ. The schottky diodes in full or half bridge rectifiers and alternators can be replaced with the LM74670-Q1 solution to avoid forward conduction diode losses and produce more efficient AC-DC converters.
The LM74670-Q1 controller provides a gate drive for external N-Channel MOSFET and a fast response internal comparator to pull-down the MOSFET Gate in the event of reverse polarity. This device can support an AC signal frequency up to 300Hz.
| PART NUMBER | PACKAGE | BODY SIZE (NOM) |
|---|---|---|
| LM74670-Q1 | VSSOP (8) | 3.00 mm × 5.00 mm |
