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SN74CBTLV3257-EP - 产品图解：
SN74CBTLV3257-EP-增强型产品低压 4 位 2 选 1 FET 多路复用器/多路解复用器
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TI产品 - SN74CBTLV3257-EP介绍

SN74CBTLV3257-EP - 增强型产品低压 4 位 2 选 1 FET 多路复用器/多路解复用器

SN74CBTLV3257-EP是TI德州仪器公司的一款数字多路复用器/多路解复用器产品，SN74CBTLV3257-EP是增强型产品低压 4 位 2 选 1 FET 多路复用器/多路解复用器，本站介绍了SN74CBTLV3257-EP的封装应用图解、特点和优点、功能等，并给出了与SN74CBTLV3257-EP相关的TI元器件型号供参考。

SN74CBTLV3257-EP - 增强型产品低压 4 位 2 选 1 FET 多路复用器/多路解复用器 - 数字多路复用器/多路解复用器 - 多路复用器/多路解复用器(Mux/Demux) - 德州仪器

产品描述
产品特性

  • Controlled Baseline
    • One Assembly Site
    • One Test Site
    • One Fabrication Site
  • Extended Temperature Performance of –55°C to 125°C
  • Enhanced Diminishing Manufacturing Sources (DMS) Support
  • Enhanced Product-Change Notification
  • Qualification Pedigree(1)
  • 5- Switch Connection Between Two Ports
  • Rail-to-Rail Switching on Data I/O Ports
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Protection Exceeds JESD 22
    • 2000-V Human-Body Model (A114-A)
    • 200-V Machine Model (A115-A)

(1) Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits.

DESCRIPTION/ORDERING INFORMATION

The SN74CBTLV3257 is a 4-bit 1-of-2 high-speed FET multiplexer/demultiplexer. The low on-state resistance of the switch allows connections to be made with minimal propagation delay.

The select (S) input controls the data flow. The FET multiplexers/demultiplexers are disabled when the output-enable (OE) input is high.

This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current does not backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

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