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SN74LV374AT-SN74LV374AT
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TI产品 - SN74LV374AT介绍

SN74LV374AT - SN74LV374AT

SN74LV374AT是TI德州仪器公司的一款D类触发器产品，SN74LV374AT是SN74LV374AT，本站介绍了SN74LV374AT的封装应用图解、特点和优点、功能等，并给出了与SN74LV374AT相关的TI元器件型号供参考。

SN74LV374AT - SN74LV374AT - D类触发器 - 触发器/锁存器/寄存器 - 德州仪器

产品描述

The SN74LV374AT is an octal edge-triggered D-type flip-flop. This device features 3-state outputs designed specifically for driving highly capacitive or relatively low-impedance loads. The device is particularly suitable for implementing buffer registers, I/O ports, bidirectional bus drivers, and working registers.

On the positive transition of the clock (CLK) input, the Q outputs are set to the logic levels set up at the data (D) inputs.

A buffered output-enable (OE) input can be used to place the eight outputs in either a normal logic state (high or low logic levels) or high-impedance state. In the high-impedance state, the outputs neither load nor drive the bus lines significantly. The high-impedance state and the increased drive provide the capability to drive bus lines without need for interface or pullup components.

OE does not affect internal operations of the latch. Old data can be retained or new data can be entered while the outputs are in the high-impedance state.

To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down.

产品特性

  • Inputs Are TTL-Voltage Compatible
  • 4.5-V to 5.5-V VCC Operation
  • Typical tpd of 4.9 ns at 5 V
  • Typical VOLP (Output Ground Bounce) <0.8 V at VCC = 5 V, TA = 25°C
  • Typical VOHV (Output VOH Undershoot) >2.3 V at VCC = 5 V, TA = 25°C
  • Support Mixed-Mode Voltage Operation on All Ports
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 250 mA Per JESD 17
  • ESD Protection Exceeds JESD 22
    • 2000-V Human-Body Model (A114-A)
    • 200-V Machine Model (A115-A)
    • 1000-V Charged-Device Model (C101)

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