LM5109B是TI公司的一款半桥驱动器产品，LM5109B是高电压 1A 峰值半桥接闸极驱动器，本页介绍了LM5109B的产品说明、应用、特性等，并给出了与LM5109B相关的TI元器件型号供参考。
LM5109B - 高电压 1A 峰值半桥接闸极驱动器 - 半桥驱动器 - MOSFET和IGBT栅极驱动器 - TI公司（Texas Instruments，德州仪器）
The LM5109B is a cost effective, high voltage gate driver designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of working with rail voltages up to 90V. The outputs are independently controlled with TTL compatible input thresholds. The robust level shift technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high-side gate driver. Under-voltage lockout is provided on both the low-side and the high-side power rails. The device is available in the SOIC-8 and the thermally enhanced WSON-8 packages.
- Drives Both a High-Side and Low-Side N-Channel MOSFET
- 1A peak Output Current (1.0A Sink / 1.0A Source)
- Independent TTL Compatible Inputs
- Bootstrap Supply Voltage to 108V DC
- Fast Propagation Times (30 ns Typical)
- Drives 1000 pF Load with 15ns Rise and Fall Times
- Excellent Propagation Delay Matching (2 ns Typical)
- Supply Rail Under-Voltage Lockout
- Low Power Consumption
- Pin Compatible with ISL6700
Package
- SOIC-8
- WSON-8 (4 mm x 4 mm)
