LM5111是TI公司的一款低侧驱动器产品，LM5111是双路 5A 复合成型闸极驱动器，本页介绍了LM5111的产品说明、应用、特性等，并给出了与LM5111相关的TI元器件型号供参考。
LM5111 - 双路 5A 复合成型闸极驱动器 - 低侧驱动器 - MOSFET和IGBT栅极驱动器 - TI公司（Texas Instruments，德州仪器）
The LM5111 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each “compound” output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Under-voltage lockout protection is also provided. The drivers can be operated in parallel with inputs and outputs connected to double the drive current capability. This device is available in the SOIC package or the thermally enhanced VSSOP package.
- Independently Drives Two N-Channel MOSFETs
- Compound CMOS and Bipolar Outputs Reduce Output Current Variation
- 5A Sink/3A Source Current Capability
- Two Channels can be Connected in Parallel to Double the Drive Current
- Independent Inputs (TTL Compatible)
- Fast Propagation Times (25 ns Typical)
- Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load)
- Available in Dual Non-Inverting, Dual Inverting and Combination Configurations
- Supply Rail Under-Voltage Lockout Protection (UVLO)
- LM5111-4 UVLO Configured to Drive PFET through OUT_A and NFET through OUT_B
- Pin Compatible with Industry Standard Gate Drivers
Packages
- SOIC-8
- Thermally Enhanced VSSOP
