LMG5200 - LMG5200 80V GaN 半桥功率级

LMG5200是TI德州仪器公司的一款GaNFET模块产品，LMG5200是LMG5200 80V GaN 半桥功率级，本站介绍了LMG5200的封装应用图解、特点和优点、功能等，并给出了与LMG5200相关的TI元器件型号供参考。

LMG5200 - LMG5200 80V GaN 半桥功率级 - GaNFET模块 - 氮化镓(GaN)?解决方案 - 德州仪器

产品描述

The LMG5200, a 80-V Driver GaN half-bridge power stage, provides an integrated power stage solution using enhancement-mode Gallium Nitride (GaN) FETs. The LMG5200 consists of two, 80-V GaN FETs driven by one high-frequency GaN FET driver in a half-bridge configuration.

The inputs of LMG5200 are TTL logic compatible, and can withstand input voltages up to 14 V regardless of the VCC voltage. The proprietary bootstrap voltage clamping technique ensures the gate voltages of the enhancement mode GaN FETs are within a safe operation range. GaN FETs provide significant advantages for power conversion as they have near zero reverse recovery and very small input capacitance CISS. All the devices are mounted on a completely bond-wire-free package platform with minimized package parasitic elements. The LMG5200 is available in a 6 mm x 8 mm x 2 mm lead free package and can be easily mounted on PCBs.

The LMG5200 extends advantages of discrete GaN FETs by offering a more user-friendly interface. It is an ideal solution for applications requiring high-frequency, high-efficiency operation in a small form factor. It reduces the board requirements for maintaining clearance and creepage requirements for medium voltage GaN applications while minimizing the loop inductances to ensure fast switching.

For all available packages, see the orderable addendum at

产品特性

Input Voltage up to 80-V DC
Integrated 80-V, 18-mΩ, GaN FETs
Optimized Pinout for Easy PCB Layout
Internal Bootstrap Supply Voltage Clamping to Prevent GaN FET Overdrive
Supply Rail Undervoltage Lockout
Independent High-Side and Low-Side TTL Logic Inputs
Fast Propagation Times (29.5 ns Typical)
Excellent Propagation Delay Matching (2 ns Typical)
Low Power Consumption

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