SN65LVDS19是TI公司的一款中继器/缓冲器产品，SN65LVDS19是具有使能端的 2.5V/3.3V 振荡器增益级/缓冲器，本页介绍了SN65LVDS19的产品说明、应用、特性等，并给出了与SN65LVDS19相关的TI元器件型号供参考。
SN65LVDS19 - 具有使能端的 2.5V/3.3V 振荡器增益级/缓冲器 - 中继器/缓冲器 - LVDS/M-LVDS/ECL/CML - TI公司（Texas Instruments，德州仪器）
These four devices are high frequency oscillator gain stages supporting both LVPECL or LVDS on the high gain outputs in 3.3-V or 2.5-V systems. Additionally, provides the option of both single-ended input (PECL levels on the SN65LVx18) and fully differential inputs on the SN65LVx19.
The SN65LVx18 provides the user a Gain Control (GC) for controlling the Q output from 300 mV to 860 mV either by leaving it open (NC), grounded, or tied to VCC. (When left open, the Q output defaults to 575 mV.) The Q on the SN65LVx19 defaults to 575 mV as well.
Both devices provide a voltage reference (VBB) of typically 1.35 V below VCC for use in receiving single-ended PECL input signals. When not used, VBB should be unconnected or open.
All devices are characterized for operation from -40°C to 85°C.
- Low-Voltage PECL Input and Low-Voltage PECL or LVDS Outputs
- Clock Rates to 1 GHz
- 250-ps Output Transition Times
- 0.12 ps Typical Intrinsic Phase Jitter
- Less than 630 ps Propagation Delay Times
- 2.5-V or 3.3-V Supply Operation
- 2-mm x 2-mm Small-Outline No-Lead Package
- APPLICATIONS
- PECL-to-LVDS Translation
- Clock Signal Amplification
