SN74CB3Q3245 - 8 位 2.5V/3.3V 低电压 FET 总线开关

SN74CB3Q3245是TI德州仪器公司的一款数字开关产品，SN74CB3Q3245是8 位 2.5V/3.3V 低电压 FET 总线开关，本站介绍了SN74CB3Q3245的封装应用图解、特点和优点、功能等，并给出了与SN74CB3Q3245相关的TI元器件型号供参考。

SN74CB3Q3245 - 8 位 2.5V/3.3V 低电压 FET 总线开关 - 数字开关 - 信号开关 - 德州仪器

产品描述

The SN74CB3Q3245 is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3245 provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems.

The SN74CB3Q3245 is organized as an 8-bit bus switch with a single output-enable (OE\) input. When OE\ is low, the bus switch is ON and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE\ is high, the bus switch is OFF and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, OE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

产品特性

High-Bandwidth Data Path (Up to 500 MHz)
Equivalent to IDTQS3VH384 Device
5-V Tolerant I/Os with Device Powered-Up or Powered-Down
Low and Flat ON-State Resistance (ron) Characteristics Over Operating Range (ron = 4 Typical)
Rail-to-Rail Switching on Data I/O Ports
- 0- to 5-V Switching With 3.3-V VCC
- 0- to 3.3-V Switching With 2.5-V VCC
Bidirectional Data Flow, With Near-Zero Propagation Delay
Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 3.5 pF Typical)
Fast Switching Frequency (fOE\ = 20 MHz Max)
Data and Control Inputs Provide Undershoot Clamp Diodes
Low Power Consumption (ICC = 1 mA Typical)
VCC Operating Range From 2.3 V to 3.6 V
Data I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
Control Inputs Can be Driven by TTL or 5-V/3.3-V CMOS Outputs
Ioff Supports Partial-Power-Down Mode Operation
Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
ESD Performance Tested Per JESD 22
- 2000-V Human-Body Model (A114-B, Class II)
- 1000-V Charged-Device Model (C101)
Supports Both Digital and Analog Applications: PCI Interface, Differential Signal Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating

For additional information regarding the performance characteristics of the CB3Q family, refer to the TI application report, CBT-C, CB3T, and CB3Q Signal-Switch Families, literature number SCDA008.

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