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SN74CBTD3384C - 产品图解:
SN74CBTD3384C-具有电平转换和 -2V 下冲保护的 10 位 FET 总线开关
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TI产品 - SN74CBTD3384C介绍
SN74CBTD3384C - 具有电平转换和 -2V 下冲保护的 10 位 FET 总线开关

SN74CBTD3384C是TI公司的一款数字开关产品,SN74CBTD3384C是具有电平转换和 -2V 下冲保护的 10 位 FET 总线开关,本页介绍了SN74CBTD3384C的产品说明、应用、特性等,并给出了与SN74CBTD3384C相关的TI元器件型号供参考。

SN74CBTD3384C - 具有电平转换和 -2V 下冲保护的 10 位 FET 总线开关 - 数字开关 - 信号开关 - TI公司(Texas Instruments,德州仪器)

产品描述

The SN74CBTD3384C is a high-speed TTL-compatible FET bus switch with low ON-state resistance, allowing for minimal propagation delay. This device features an integrated diode to VCC to provide level shifting for 5-V input down to 3.3-V output levels. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBTD3384C provides protection for undershoot down to –2 V by sensing an undershoot event and ensuring that the switch remains in the proper state.

The SN74CBTD3384C is organized as two 5-bit bus switches with separate output-enable (OE)\ inputs. It can be used as two 5-bit bus switches or as one 10-bit bus switch. When OE\ is low, the associated 5-bit bus switch is ON, and port A is connected to port B. When OE\ is high, the associated 5-bit bus switch is OFF, and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down.

To ensure the high-impedance state during power up or power down, OE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

产品特性

  • Undershoot Protection for Off-Isolation on A and B Ports Up To –2 V
  • Integrated Diode to VCC Provides 5-V Input Down To 3.3-V Output Level Shift
  • Bidirectional Data Flow, With Near-Zero Propagation Delay
  • Low ON-State Resistance (ron) Characteristics (ron = 3 Typical)
  • Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 5 pF Typical)
  • Data and Control Inputs Provide Undershoot Clamp Diodes
  • VCC Operating Range From 4.5 V to 5.5 V
  • Data I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
  • Control Inputs Can be Driven by TTL or 5-V/3.3-V CMOS Outputs
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Supports Both Digital and Analog Applications: Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating

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