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TXS02326 - 产品图解：
TXS02326-具有转换器的双电源待机 SIM 卡多路复用器扩展器
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TI产品 - TXS02326介绍

TXS02326 - 具有转换器的双电源待机 SIM 卡多路复用器扩展器

TXS02326是TI德州仪器公司的一款应用特定电压转换产品，TXS02326是具有转换器的双电源待机 SIM 卡多路复用器扩展器，本站介绍了TXS02326的封装应用图解、特点和优点、功能等，并给出了与TXS02326相关的TI元器件型号供参考。

TXS02326 - 具有转换器的双电源待机 SIM 卡多路复用器扩展器 - 应用特定电压转换 - 电压电平转换 - 德州仪器

产品描述

The TXS02326 is a complete dual-supply standby Smart Identity Module (SIM) card solution for interfacing wireless baseband processors with two individual SIM subscriber cards to store data for mobile handset applications. It is a custom device which is used to extend a single SIM/UICC interface to be able to support two SIMs/UICCs.

The device complies with ISO/IEC Smart-Card Interface requirements as well as GSM and 3G mobile standards. It includes a high-speed level translator capable of supporting Class-B (2.95 V) and Class-C (1.8 V) interfaces, two low-dropout (LDO) voltage regulators that have output voltages that are selectable between 2.95-V Class-B and 1.8-V Class-C interfaces, an integrated "fast-mode" 400 kb/s "slave" I2C control register interface for configuration purposes, a 32-kHz clock input for internal timing generation, a shutdown input and a comparator input detecting battery pack removal to safely power-down the two SIM cards, each equipped with two programmable debounce counter (i.e. BSI input and SDN input) circuit realized by an 8 bit counter.

The voltage-level translator has two supply voltage pins. V_I/O sets the reference for the baseband interface and can be operated from 1.7 V to 3.3 V. VSIM1 and VSIM2 are programmed to either 1.8 V or 2.95 V, each supplied by an independent internal LDO regulator. The integrated LDO accepts input battery voltages from 2.3 V to 5.5 V and outputs up to 50 mA to the B-side circuitry and external Class-B or Class-C SIM card.

产品特性

  • Level Translator
    • V_I/O Range of 1.7 V to 3.3 V
  • Low-Dropout (LDO) Regulator
    • 50-mA LDO Regulator With Enable
    • 1.8-V or 2.95-V Selectable Output Voltage
    • 2.3-V to 5.5-V Input Voltage Range
    • Very Low Dropout: 100 mV (Max) at 50 mA
  • Control and Communication Through I2C Interface With Baseband Processor
  • ESD Protection Exceeds JESD 22
    • 2000-V Human-Body Model (A114-B)
    • 1000-V Charged-Device Model (C101)
  • Package
    • 24-Pin QFN (4 mm × 4 mm)

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