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SN74AUP1G125 - 产品图解:
SN74AUP1G125-具有三态输出的低功耗单路总线缓冲器门
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TI产品 - SN74AUP1G125介绍

SN74AUP1G125 - 具有三态输出的低功耗单路总线缓冲器门

SN74AUP1G125是TI德州仪器公司的一款无产品,SN74AUP1G125是具有三态输出的低功耗单路总线缓冲器门,本站介绍了SN74AUP1G125的封装应用图解、特点和优点、功能等,并给出了与SN74AUP1G125相关的TI元器件型号供参考。

SN74AUP1G125 - 具有三态输出的低功耗单路总线缓冲器门 - 无 - 小尺寸逻辑器件 - 德州仪器

产品描述

The AUP family is TI’s premier solution to the industry's low-power needs in battery-powered portable applications. This family ensures a very low static and dynamic power consumption across the entire VCC range of 0.8 V to 3.6 V, resulting in an increased battery life. This product also maintains excellent signal integrity.

This bus buffer gate is a single line driver with a 3-state output. The output is disabled when the output-enable (OE) input is high. This device has the input-disable feature, which allows floating input signals.

To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

NanoStar™ package technology is a major breakthrough in IC packaging concepts, using the die as the package.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down.

产品特性

  • Available in the Texas Instruments NanoStar Package
  • Low Static-Power Consumption (ICC = 0.9 µA Max)
  • Low Dynamic-Power Consumption (Cpd = 4 pF Typ at 3.3 V)
  • Low Input Capacitance (CI = 1.5 pF Typ)
  • Low Noise Overshoot and Undershoot <10% of VCC
  • Input-Disable Feature Allows Floating Input Conditions
  • Ioff Supports Partial-Power-Down Mode Operation
  • Input Hysteresis Allows Slow Input Transition and Better Switching Noise Immunity at Input
  • Wide Operating VCC Range of 0.8 V to 3.6 V
  • Optimized for 3.3-V Operation
  • 3.6-V I/O Tolerant to Support Mixed-Mode Signal Operation
  • tpd = 4.6 ns Max at 3.3 V
  • Suitable for Point-to-Point Applications
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)

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