EMB1412 - EMB1412 MOSFET 栅极驱动器

EMB1412是TI德州仪器公司的一款低侧驱动器产品，EMB1412是EMB1412 MOSFET 栅极驱动器，本站介绍了EMB1412的封装应用图解、特点和优点、功能等，并给出了与EMB1412相关的TI元器件型号供参考。

EMB1412 - EMB1412 MOSFET 栅极驱动器 - 低侧驱动器 - MOSFET和IGBT栅极驱动器 - 德州仪器

产品特性

Compound CMOS and Bipolar Outputs Reduce Output Current Variation
7 A Sink/3 A Source Current
Fast Propagation Times (25 ns Typical)
Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load)
Inverting and Non-Inverting Inputs Provide Either Configuration with a Single Device
Supply Rail Under-Voltage Lockout Protection
Dedicated Input Ground (IN_REF) for Split Supply or Single Supply Operation
Thermally Enhanced 8-Pin VSSOP Package
Output Swings from VCC to VEE Which can be Negative Relative to Input Ground

产品应用

Li-Ion Battery Management Systems
Hybrid and Electric Vehicles
Grid Storage
48 V Systems Supply
UPS

产品说明

The EMB1412 MOSFET gate driver provides high peak gate drive current in 8-lead exposed-pad VSSOP package, with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7-A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Under-voltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turn-on voltage. The EMB1412 provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type.

产品器件信息

PART NUMBER	PACKAGE	BODY SIZE (NOM)
EMB1412	HVSSOP (8)	3.00 mm x 3.00 mm

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